, l) nc. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 SD1462 rf & microwave transistors wideband vhf-uhf class c class c transistor frequency 400mhz voltage 28v power out 70w polwer gain 9.00b efficiency 60% common emitter gold metallization .s006lf(m111) epoxy sealed order code 501462 branding SD1462 description the sd14?2 is a 28.0v epitaxial silicon npn planar transistor designed primiarily for uhf communica- tions. this device utilizes diffused emitter resistors to achieve vswr of 10:1 under operating condi- tions, and is internally input matched to optimize power gain and efficiency over the band. pin connection 1 emitter 3 base absolute maximum ratings (tc . 25"c> symbol vcao vceo vtbo 'c ptol t.,, ti pir?m?t?r collector - base voltage collector ? emitter voltage emitter - bas? voltage collector current total power dissipation storage temperature junction temperature value 60 33 4 8 220 - 65 to + 1 50 + 200 unit v v v a w ?c "c thermal data junction-case thermal haaltlanee 0,8 ?c/w nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
SD1462 electrical characteristics (tmm = 25"c) static symbol bvcso bvcrc, bve80 icuo hfe tot conditions ic ? 50ma if - 0 lc=50ma lc-0 ie -10ma lc-0 vuu -30v ip -0 vce =5v lc -1a min 60 33 4 20 vllu* typ max. g 120 unit v v v ma dynamic symbol fa gp in cob tmt conditions f = 400mhz vce - 28v 1 = 400mhz vcc - 2sv ( = 400mhz vcc - 28v f-imhr vuu-30v ie - 0 mln. 70 9 vtlue typ. 60 65 max. unit w |
